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January 2014
FSAM30SH60A
Motion SPM ? 2 Series
Features
? UL Certified No. E209204 (UL1557)
? 600 V - 30 A 3-Phase IGBT Inverter with Integral
Gate Drivers and Protection
? Low-Loss, Short-Circuit Rated IGBTs
General Description
FSAM30SH60A is a Motion SPM ? 2 module
providing a fully-featured, high-performance inverter
stage for AC Induction, BLDC, and PMSM motors.
These modules integrate optimized gate drive of
? Low Thermal
Substrate
Resistance
Using
Ceramic
the built-in IGBTs to minimize EMI and losses, while
also providing multiple on-module protection
? Separate Open-Emitter Pins from Low Side IGBTs
for Three-Phase Current Sensing
? Single-Grounded Power Supply
? Optimized for 15 kHz Switching Frequency
features including under-voltage lockouts, over-
current shutdown, thermal monitoring, and fault
reporting. The built-in, high-speed HVIC requires
only a single supply voltage and translates the
incoming logic-level gate inputs to the high-voltage,
? Built-in NTC
Monitoring
Thermistor
for
Temperature
high-current drive signals required to properly drive
the module's internal IGBTs. Separate negative
IGBT terminals are available for each phase to
? Inverter Power Rating of 2.4 kW / 100~253 VAC
support the widest variety of control algorithms.
? Adjustable Current Protection Level via Selection
of Sense-IGBT Emitter's External Rs
? Isolation Rating: 2500 V rms / min.
Applications
? Motion Control - Home Appliance / Industrial Motor
Resource
? AN-9043 - Motion SPM? 2 Series User's Guide
Figure 1. Package Overview
Package Marking and Ordering Information
Device
FSAM30SH60A
Device Marking
FSAM30SH60A
Package
S32AA-032
Packing Type
Rail
Quantity
8
?2003 Fairchild Semiconductor Corporation
FSAM30SH60A Rev. C8
1
www.fairchildsemi.com
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相关代理商/技术参数
FSAM30SH60A 制造商:Fairchild Semiconductor Corporation 功能描述:POWER SUPPLY IC 制造商:Fairchild Semiconductor Corporation 功能描述:Power Supply IC
FSAM30SH60A_03 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:SPMTM (Smart Power Module)
FSAM30SM60A 功能描述:IGBT 模块 600V/30A/ SPM2 RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装:
FSAM30SM60SL 功能描述:IGBT 模块 600V/30A Smart Power RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装:
FSAM50SM60A 功能描述:IGBT 晶体管 600V -50A SMART POWER MODULE RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube
FSAM75SM60A 功能描述:IGBT 模块 600V -75A SMART POWER MODULE RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装:
FSAM75SM60SL 功能描述:IGBT 模块 600V/75A Smart Power RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装:
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